download pdf: Program-EUROMBE2015

(new version with the complete lists of talks and posters)

 

 

Invited Speakers

 

Plenary: prof. Gerhard Abstreiter – TU Munchen (Germany)
Self-assembled quantum dots and core-shell hetero-nanowires

Alexei Baranov – Université Montpellier 2 (France)
Long wavelength InAs-based quantum cascade lasers

Hans Boschker – MPI-FKF (Germany)
Growth of complex oxides for solid state quantum electronics

Martien den Hertog – Institut Neel, Grenoble (France)
Correlation of optoelectronic and transport properties of GaN/AlN nanowires with polarity and crystal structures

Jean-Christophe Harmand – CNRS-LPN (France)
Epitaxial platforms for nanowire growth: the nano-substrates

Christian Heyn – University of Hamburg (Germany)
Metal droplet etching: combining self-assembled top-down with bottom-up strategies for nanostructuring

Valentin Jmerik – IOFFE (Russia)
PA MBE of AlGaN-based heterostructures for mid-ultraviolet οptoelectronics

Huiyun Liu – UCL (UK)
III-V quantum dots and quantum-dot devices monolithically grown on silicon platform for silicon photonics

Clement Merkling – imec (Belgium)
Towards the integration of molecular beam epitaxy technique for advanced III-V CMOS and beyond Si devices

Geelhaar Lutz – Paul-Drude-Institut für Festkörperelektronik (Germany)
Predictive growth of self-assisted GaAs nanowires on Si(III)

Frank Natali – University of Wellington (New Zealand)
Rare-earth mononitrides: novel intrinsic ferromagnetic semiconductors

Michael Oehme – Stuttgart Univ. (Germany)
GeSn heteroepitaxy on Si

Czeslaw Skierbiszewski – Polish Academy of Science (Poland)
Long living true-blue laser diodes grown by Pambe

Masahiro Yoshimoto – Kyoto Tech (Japan)
Molecular beam epitaxy of GaAsBi and its application to laser diodes with low-temperature dependence of oscillation wavelength