{"id":1179,"date":"2016-08-04T11:05:00","date_gmt":"2016-08-04T11:05:00","guid":{"rendered":"http:\/\/web.nano.cnr.it\/heun\/?page_id=1179"},"modified":"2020-04-22T12:50:15","modified_gmt":"2020-04-22T12:50:15","slug":"sgm-9","status":"publish","type":"page","link":"https:\/\/web.nano.cnr.it\/heun\/research\/sgm-9\/","title":{"rendered":"SGM 9"},"content":{"rendered":"

Weak Localization in a Black Phosphorus Naked Quantum Well<\/h2>\n

Black phosphorus (bP) is a layered elemental allotrope of phosphorus that can be mechanically exfoliated to ultra-thin layers (Fig 1a). Previous magnetotransport studies on bP have led to the observation of Shubnikov-de Haas oscillations and the integer quantum Hall effect. We report here measurements of weak localization (WL) in bP quantum wells with a back-gated field effect transistor (FET) configuration (Fig. 1b, c), in the hole doped regime (Fig. 1d), over the temperature range of 0.26 K to 20 K (Fig. 1e). The weak localization (WL) behavior was found to be in excellent agreement with a Hikami-Larkin-Nagaoka (HLN) model (Fig. 1f) for fields up to 1 T, from which characteristic scattering lengths could be inferred. The inelastic scattering length Li<\/sub> was found to increase linearly with increasing hole density attaining a maximum value of 55 nm at a hole density of 1013<\/sup>cm-2<\/sup> inferred from Hall effect. The temperature dependence of Li<\/sub> was also investigated (Fig. 1g). At temperatures above 1K, the scattering length was found to decrease weaker than the characteristic Li<\/sub> ~ T-0.5<\/sup> dependence that is characteristic of electron-electron interactions. The carrier density and temperature dependence of Li<\/sub> requires further study to obtain a complete picture of inelastic scattering mechanisms in bP quantum well structures.<\/p>\n

\"bP<\/a>
\nFig 1:<\/b> a) The van der Waals bonding of buckled honeycomb layers of bP permit mechanical exfoliation. b) Optical image and c) schematic of a back-gated bP FET. d) Longitudinal resistance Rxx<\/sub> vs gate voltage Vg<\/sub> over the temperatures 0.26 \u2013 20 K. e) Weak localization behavior of Rxx<\/sub> vs magnetic field B at various temperatures at the highest hole density measured, 1013<\/sup>cm-2<\/sup>. f) Normalized Rxx<\/sub> vs magnetic field B at T = 0.26K with superimposed fits to an HLN model. g) The extracted inelastic scattering length Li<\/sub> vs temperature T.<\/i><\/p>\n

Publications:<\/p>\n

    \n
  1. N. Hemsworth, V. Tayari, F. Telesio, S. Xiang, S. Roddaro, M. Caporali, A. Ienco, M. Serrano-Ruiz, M. Peruzzini, G. Gervais, T. Szkopek, S. Heun: Dephasing in strongly anisotropic black phosphorus<\/i>, arXiv:1607.08677 [cond-mat.mes-hall]<\/a>.<\/li>\n
  2. N. Hemsworth, V. Tayari, F. Telesio, S. Xiang, S. Roddaro, M. Caporali, A. Ienco, M. Serrano-Ruiz, M. Peruzzini, G. Gervais, T. Szkopek, and S. Heun: Dephasing in strongly anisotropic black phosphorus<\/i>, Phys. Rev. B 94, 245404 (2016)<\/a>.<\/li>\n
  3. W. Dickerson, V. Tayari, I. Fakih, A. Korinek, M. Caporali, M. Serrano-Ruiz, M. Peruzzini, S. Heun, G. A. Botton, T. Szkopek: Phosphorus oxide gate dielectric for black phosphorus field effect transistors<\/i>, arXiv:1804.03639 [cond-mat.mes-hall]<\/a>.<\/li>\n
  4. W. Dickerson, V. Tayari, I. Fakih, A. Korinek, M. Caporali, M. Serrano-Ruiz, M. Peruzzini, S. Heun, G. A. Botton, and T. Szkopek: Phosphorus oxide gate dielectric for black phosphorus field effect transistors<\/i>, Appl. Phys. Lett. 112 (2018) 173101<\/a>.<\/li>\n
  5. Stefan Heun, Stefano Roddaro: Low-temperature quantum transport in 2D materials<\/i>, CNR Nano Activity Report 2018<\/a> [Page 52<\/a>].<\/li>\n<\/ol>\n

    Presented at:<\/p>\n

      \n
    1. Guillaume Gervais: (Suppression of) Dephasing in a Field-Effect Black Phosphorus Transistor<\/i>, The 22nd International Conference on High Magnetic Fields in Semiconductor Physics HMF 22<\/a>, Sapporo, Japan, July 24 – 29, 2016 (oral). [Talk<\/a>]<\/li>\n
    2. S. Heun: Dephasing in strongly anisotropic black phosphorus<\/i>, High Field Magnet Laboratory<\/a>, Radboud University<\/a>, Nijmegen, The Netherlands (Prof. J. C. Maan), 12 September 2016. [Talk<\/a>]<\/li>\n
    3. Francesca Telesio, Nicholas Hemsworth, Vahid Tayari, Shaohua Xiang, Stefano Roddaro, Maria Caporali, Andrea Ienco, Manuel Serrano-Ruiz, Maurizio Peruzzini, Guillaume Gervais, Thomas Szkopek, and Stefan Heun: Dephasing in strongly anisotropic black phosphorus<\/i>, Materials.it 2016<\/a>, Aci Castello, Catania, Italy, 12 \u2013 16 December 2016 (oral). [Abstract<\/a>] [Talk<\/a>]<\/li>\n
    4. A. Campana, F. Telesio, V. Tayari, N. Hemsworth, E. Benvenuti, L. Ortolani, M. Serrano-Ruiz, M. Caporali, G.Gervais, V. Morandi, T. Szkopek, S. Heun, S. Toffanin and M. Peruzzini: Towards few-layer black phosphorus electronics and optoelectronics devices<\/i>, Italian ERC Chem Day<\/a>, Rome, Italy, 16 March 2017. [Poster<\/a>]<\/li>\n
    5. F. Telesio: Dephasing in Strongly Anisotropic Black Phosphorus<\/i>, CNR Nano S3<\/a>, Universit\u00e0 di Modena<\/a>, Italy (Prof. E. Molinari), 20 March 2017 (invited seminar). [Abstract<\/a>] [Talk<\/a>]<\/li>\n
    6. F. Telesio: Dephasing in Strongly Anisotropic Black Phosphorus<\/i>, 2017 CNR Nano Colloquia<\/a>, Pisa, Italy, 20 April 2017 (invited seminar). [Abstract<\/a>] [Talk<\/a>]<\/li>\n
    7. T. Szkopek, G. Gervais, M. Peruzzini, and S. Heun: Black Phosphorus Field Effect Transistors: Passivation By Oxidation, and the Role of Anisotropy in Magnetotransport<\/i>, 231st ECS Meeting<\/a>, New Orleans, LA, USA, May 28-June 1, 2017 (invited). [Abstract<\/a>] [Talk<\/a>]<\/li>\n
    8. N. Hemsworth, V. Tayari, F. Telesio, S. Xiang, S. Roddaro, M. Caporali, A. Ienco, M. Serrano-Ruiz, M. Peruzzini, G. Gervais, T. Szkopek, and S. Heun<\/u>: Dephasing in Strongly Anisotropic Black Phosphorus<\/i>, 16th International Conference on the Formation of Semiconductor Interfaces<\/a>, Hannover, Germany, July 02 \u2013 07, 2017 (oral). [Abstract<\/a>] [Talk<\/a>]<\/li>\n
    9. S. Heun: The importance of surfaces for the properties of 2D materials: from graphene to phosphorene<\/i>, University of Seoul<\/a>, S. Korea (Prof. Jeil Jung), 22 September 2017 (invited). [Abstract<\/a>] [Talk<\/a>]<\/li>\n
    10. F. Telesio, N. Hemsworth, V. Tayari, S. Xiang, S. Roddaro, M. Caporali, A. Ienco, M. Serrano-Ruiz, M. Peruzzini, G. Gervais, T. Szkopek, and S. Heun: Dephasing in Strongly Anisotropic Black Phosphorus<\/i>, NanoInnovation 2017<\/a>, Rome, Italy, September 26 \u2013 29, 2017 (invited). [Abstract<\/a>] [Talk<\/a>]<\/li>\n
    11. S. Heun: Optimization of few-layer black phosphorus for low-temperature magneto-transport studies<\/i>, Iconsat 2018<\/a>, Bangalore, India, 21 \u2013 23 March 2018 (invited). [Abstract<\/a>] [Talk<\/a>]<\/li>\n
    12. S. Heun: Optimization of few-layer black phosphorus for low-temperature magneto-transport studies<\/i>, AGH University of Science and Technology<\/a>, Krakow, Poland (Prof. B. Szafran), 12 June 2018 (invited). [Abstract<\/a>] [Talk<\/a>]<\/li>\n
    13. F. Telesio, N. Hemsworth, W. Dickerson, M. Petrescu, V. Tayari, Oulin Yu, D. Graf, M. Serrano-Ruiz, M. Caporali, M. Peruzzini, M. Carrega, T. Szkopek, S. Heun<\/u>, and G. Gervais: Non-classical longitudinal magneto-resistance in anisotropic black phosphorus<\/i>, Nanomaterials for Devices<\/a>, Montreal, Canada, 10 \u2013 12 September 2018 (invited). [Abstract<\/a>] [Talk<\/a>]<\/li>\n<\/ol>\n","protected":false},"excerpt":{"rendered":"

      Weak Localization in a Black Phosphorus Naked Quantum Well Black phosphorus (bP) is a layered elemental allotrope of phosphorus that can be mechanically exfoliated to ultra-thin layers (Fig 1a). Previous magnetotransport studies on bP have led to the observation of Shubnikov-de Haas oscillations and the integer quantum Hall effect. We report here measurements of weak […]<\/p>\n","protected":false},"author":2,"featured_media":0,"parent":870,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-1179","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/web.nano.cnr.it\/heun\/wp-json\/wp\/v2\/pages\/1179","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/web.nano.cnr.it\/heun\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/web.nano.cnr.it\/heun\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/web.nano.cnr.it\/heun\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/web.nano.cnr.it\/heun\/wp-json\/wp\/v2\/comments?post=1179"}],"version-history":[{"count":32,"href":"https:\/\/web.nano.cnr.it\/heun\/wp-json\/wp\/v2\/pages\/1179\/revisions"}],"predecessor-version":[{"id":2694,"href":"https:\/\/web.nano.cnr.it\/heun\/wp-json\/wp\/v2\/pages\/1179\/revisions\/2694"}],"up":[{"embeddable":true,"href":"https:\/\/web.nano.cnr.it\/heun\/wp-json\/wp\/v2\/pages\/870"}],"wp:attachment":[{"href":"https:\/\/web.nano.cnr.it\/heun\/wp-json\/wp\/v2\/media?parent=1179"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}