SGM 9

Weak Localization in a Black Phosphorus Naked Quantum Well

Black phosphorus (bP) is a layered elemental allotrope of phosphorus that can be mechanically exfoliated to ultra-thin layers (Fig 1a). Previous magnetotransport studies on bP have led to the observation of Shubnikov-de Haas oscillations and the integer quantum Hall effect. We report here measurements of weak localization (WL) in bP quantum wells with a back-gated field effect transistor (FET) configuration (Fig. 1b, c), in the hole doped regime (Fig. 1d), over the temperature range of 0.26 K to 20 K (Fig. 1e). The weak localization (WL) behavior was found to be in excellent agreement with a Hikami-Larkin-Nagaoka (HLN) model (Fig. 1f) for fields up to 1 T, from which characteristic scattering lengths could be inferred. The inelastic scattering length Li was found to increase linearly with increasing hole density attaining a maximum value of 55 nm at a hole density of 1013cm-2 inferred from Hall effect. The temperature dependence of Li was also investigated (Fig. 1g). At temperatures above 1K, the scattering length was found to decrease weaker than the characteristic Li ~ T-0.5 dependence that is characteristic of electron-electron interactions. The carrier density and temperature dependence of Li requires further study to obtain a complete picture of inelastic scattering mechanisms in bP quantum well structures.

bP WL
Fig 1: a) The van der Waals bonding of buckled honeycomb layers of bP permit mechanical exfoliation. b) Optical image and c) schematic of a back-gated bP FET. d) Longitudinal resistance Rxx vs gate voltage Vg over the temperatures 0.26 – 20 K. e) Weak localization behavior of Rxx vs magnetic field B at various temperatures at the highest hole density measured, 1013cm-2. f) Normalized Rxx vs magnetic field B at T = 0.26K with superimposed fits to an HLN model. g) The extracted inelastic scattering length Li vs temperature T.

Publications:

  1. N. Hemsworth, V. Tayari, F. Telesio, S. Xiang, S. Roddaro, M. Caporali, A. Ienco, M. Serrano-Ruiz, M. Peruzzini, G. Gervais, T. Szkopek, S. Heun: Dephasing in strongly anisotropic black phosphorus, arXiv:1607.08677 [cond-mat.mes-hall].
  2. N. Hemsworth, V. Tayari, F. Telesio, S. Xiang, S. Roddaro, M. Caporali, A. Ienco, M. Serrano-Ruiz, M. Peruzzini, G. Gervais, T. Szkopek, and S. Heun: Dephasing in strongly anisotropic black phosphorus, Phys. Rev. B 94, 245404 (2016).
  3. W. Dickerson, V. Tayari, I. Fakih, A. Korinek, M. Caporali, M. Serrano-Ruiz, M. Peruzzini, S. Heun, G. A. Botton, T. Szkopek: Phosphorus oxide gate dielectric for black phosphorus field effect transistors, arXiv:1804.03639 [cond-mat.mes-hall].
  4. W. Dickerson, V. Tayari, I. Fakih, A. Korinek, M. Caporali, M. Serrano-Ruiz, M. Peruzzini, S. Heun, G. A. Botton, and T. Szkopek: Phosphorus oxide gate dielectric for black phosphorus field effect transistors, Appl. Phys. Lett. 112 (2018) 173101.
  5. Stefan Heun, Stefano Roddaro: Low-temperature quantum transport in 2D materials, CNR Nano Activity Report 2018 [Page 52].

Presented at:

  1. Guillaume Gervais: (Suppression of) Dephasing in a Field-Effect Black Phosphorus Transistor, The 22nd International Conference on High Magnetic Fields in Semiconductor Physics HMF 22, Sapporo, Japan, July 24 – 29, 2016 (oral). [Talk]
  2. S. Heun: Dephasing in strongly anisotropic black phosphorus, High Field Magnet Laboratory, Radboud University, Nijmegen, The Netherlands (Prof. J. C. Maan), 12 September 2016. [Talk]
  3. Francesca Telesio, Nicholas Hemsworth, Vahid Tayari, Shaohua Xiang, Stefano Roddaro, Maria Caporali, Andrea Ienco, Manuel Serrano-Ruiz, Maurizio Peruzzini, Guillaume Gervais, Thomas Szkopek, and Stefan Heun: Dephasing in strongly anisotropic black phosphorus, Materials.it 2016, Aci Castello, Catania, Italy, 12 – 16 December 2016 (oral). [Abstract] [Talk]
  4. A. Campana, F. Telesio, V. Tayari, N. Hemsworth, E. Benvenuti, L. Ortolani, M. Serrano-Ruiz, M. Caporali, G.Gervais, V. Morandi, T. Szkopek, S. Heun, S. Toffanin and M. Peruzzini: Towards few-layer black phosphorus electronics and optoelectronics devices, Italian ERC Chem Day, Rome, Italy, 16 March 2017. [Poster]
  5. F. Telesio: Dephasing in Strongly Anisotropic Black Phosphorus, CNR Nano S3, Università di Modena, Italy (Prof. E. Molinari), 20 March 2017 (invited seminar). [Abstract] [Talk]
  6. F. Telesio: Dephasing in Strongly Anisotropic Black Phosphorus, 2017 CNR Nano Colloquia, Pisa, Italy, 20 April 2017 (invited seminar). [Abstract] [Talk]
  7. T. Szkopek, G. Gervais, M. Peruzzini, and S. Heun: Black Phosphorus Field Effect Transistors: Passivation By Oxidation, and the Role of Anisotropy in Magnetotransport, 231st ECS Meeting, New Orleans, LA, USA, May 28-June 1, 2017 (invited). [Abstract] [Talk]
  8. N. Hemsworth, V. Tayari, F. Telesio, S. Xiang, S. Roddaro, M. Caporali, A. Ienco, M. Serrano-Ruiz, M. Peruzzini, G. Gervais, T. Szkopek, and S. Heun: Dephasing in Strongly Anisotropic Black Phosphorus, 16th International Conference on the Formation of Semiconductor Interfaces, Hannover, Germany, July 02 – 07, 2017 (oral). [Abstract] [Talk]
  9. S. Heun: The importance of surfaces for the properties of 2D materials: from graphene to phosphorene, University of Seoul, S. Korea (Prof. Jeil Jung), 22 September 2017 (invited). [Abstract] [Talk]
  10. F. Telesio, N. Hemsworth, V. Tayari, S. Xiang, S. Roddaro, M. Caporali, A. Ienco, M. Serrano-Ruiz, M. Peruzzini, G. Gervais, T. Szkopek, and S. Heun: Dephasing in Strongly Anisotropic Black Phosphorus, NanoInnovation 2017, Rome, Italy, September 26 – 29, 2017 (invited). [Abstract] [Talk]
  11. S. Heun: Optimization of few-layer black phosphorus for low-temperature magneto-transport studies, Iconsat 2018, Bangalore, India, 21 – 23 March 2018 (invited). [Abstract] [Talk]
  12. S. Heun: Optimization of few-layer black phosphorus for low-temperature magneto-transport studies, AGH University of Science and Technology, Krakow, Poland (Prof. B. Szafran), 12 June 2018 (invited). [Abstract] [Talk]
  13. F. Telesio, N. Hemsworth, W. Dickerson, M. Petrescu, V. Tayari, Oulin Yu, D. Graf, M. Serrano-Ruiz, M. Caporali, M. Peruzzini, M. Carrega, T. Szkopek, S. Heun, and G. Gervais: Non-classical longitudinal magneto-resistance in anisotropic black phosphorus, Nanomaterials for Devices, Montreal, Canada, 10 – 12 September 2018 (invited). [Abstract] [Talk]